Quantifying Strain and its Effect on Charge Transport in Ge/Si Core/Shell Nanowires

In this work, the authors study strain engineering in Ge/Si core-shell nanowires (CS NWs) through polarization-resolved micro-Raman measurements and geometric phase analysis (GPA). The electronic transport measurements showed, on average, higher hole mobility than previously reported values. In the best-performing device, record hole mobilities up to 25,400 cm²/Vs are achieved, highlighting these Ge/Si core-shell nanowires as a promising platform for scalable semiconductor spin-qubit devices.