Valley polarization in bandgap engineered WS2xSe2(1-x) monolayers: application for artificial intelligence spintronic/valleytronic devices

With the rapid and remarkable progress of artificial intelligence technologies, the demand for advanced materials and novel electronic properties has increased significantly, thereby accelerating developments in cutting - edge fields such as spintronics and valleytronics. In these areas, the efficient creation and precise control of valley - spin polarization are of crucial importance, serving as fundamental requirements for practical applications in next - generation spin - based and valley - based electronic devices. In this research, high - quality WS_2xSe_2(1−x) monolayers with excellent crystalline properties were successfully produced using a carefully optimized chemical vapor deposition method. Detailed structural analysis confirms that the crystal lattice of the synthesized WS_2xSe_2(1−x) monolayers maintains perfect C₃ rotational symmetry, and the measured degree of second harmonic generation (SHG) polarization approaches near - unity values, indicating a highly ordered and symmetric atomic arrangement. Through steady - state photoluminescence (PL) characterizations, it is further demonstrated that the valley polarization degree of WS_2xSe_2(1−x) monolayers shows a consistent and steady increase as the Se concentration is gradually raised . The research findings clearly indicate that the SHG response from the WS_2xSe_2(1−x)) monolayer shows a near - unity degree of valley polarization. At the same time, continuously tunable PL valley polarization is robustly realized within the material system. These results offer valuable and potential guidance for the synthesis strategies of atomically thin alloy material systems, which are highly suitable for integration into innovative spin - based and valley - based electronic devices, particularly in artificial intelligence applications that prioritize efficient energy usage, low - power logic operations, and high - density data storage technologies.