ALD-engineered, conformal IGZO for next-generation electronics and optoelectronic applications

The growing demand for high-resolution displays, wearables, and energy-efficient devices drives the search for advanced semiconducting materials. Indium Gallium Zinc Oxide (IGZO), an amorphous oxide semiconductor, offers high electron mobility, wide bandgap, and optical transparency—making it a strong alternative to silicon. While sputtering is common for IGZO deposition, it struggles with uniformity on complex or flexible substrates. Atomic Layer Deposition (ALD) offers superior conformality, precise control, and low-temperature processing—ideal for heat-sensitive materials. SENTECH, with over 30 years in plasma processing and thin-film metrology, presents a bottom-up approach for IGZO thin film deposition. Individual ALD processes for zinc, gallium, and indium oxides were developed and combined into a super-cycle process. In-situ ellipsometry enabled real-time process monitoring; XPS confirmed uniform composition. This method enables stoichiometric control and tunable electrical properties for next-generation devices.