Performance Evaluation of Si Power and SiC MOSFET, IGBT, and HEMT GaN at Cryogenic Temperature for Superconducting Propulsion System

The development of superconducting propulsion systems with cold power electronic converters makes it possible to improve the overall efficiency of onboard systems, particularly in the context of electric propulsion for aircraft. However, the characterization of power electronic components at cryogenic temperatures remains poorly documented. Thus, this study investigates the static and switching losses of Si and SiC MOSFETs, IGBTs, and GaN HEMT over a temperature range from 10 K to 300 K. An experimental setup was designed, consisting of a switching cell with various test components mounted on the cold plate of a cryocooler. The double-pulse measurement method was used to evaluate the switching losses, but several challenges arise in the cryogenic environment. Solutions were implemented, including the use of a current transformer and a capacitor that are suitable for cryogenic conditions. The results show a significant variation in the behavior and switching losses of the components during turn-on and turn-off influenced by temperature, material, and structural characteristics. Regarding losses, GaN HEMTs are optimal for use at liquid hydrogen temperature, while some Si MOSFETs perform well between 80 K and 170 K, and NPT IGBTs offer a slight advantage at temperatures between 80 K and 110 K. This work will contribute to better understanding and future optimization of the performance of cold power electronic components for superconducting applications.