Squeezed-light generation in thin-film silicon nitride photonic integrated chips

Squeezed light is a fundamental resource for a broad spectrum of quantum technologies, including precision metrology, secure communication, and quantum simulation and computing. The integration of squeezed-light sources with photonic circuits presents a transformative approach—not only offering compactness, stability, and scalability, but also enabling seamless high-fidelity on-chip generation, manipulation, and processing of quantum states without being hampered by inter-component quantum decoherence arising from loss and noise. In this work, we report the experimental generation of a two-mode squeezed vacuum state on a thin-film silicon-nitride photonic integrated circuit with normal group velocity dispersion of 6.3×105 fs2/m. Quadrature squeezing of −2.1 dB±0.09 dB and anti-squeezing of 7.1 dB±0.04 dB are directly measured. To fully understand the dynamics of the quantum process, a comprehensive theoretical model is developed to capture the squeezing performance, showing excellent agreement with experimental results. Our findings highlight the potential of the thin-film silicon nitride platform that capitalizes on fully foundry-compatible fabrication technologies to advance robust, large-scale, and manufacturing-ready quantum information processing systems.