Deposition Behavior in Atmospheric-Pressure Plasma CVD Evaluated by a Quartz Crystal Microbalance

Atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) enables low-temperature coating in open air, yet the interplay between precursor activation and ambient-derived species remains unclear. Here, thin films from an amine precursor are deposited using a helium plasma and characterized by gas chromatography–mass spectrometry (GC-MS), a quartz crystal microbalance (QCM), and X-ray photoelectron spectroscopy (XPS). GC-MS indicates partial precursor conversion and formation of oxygen- and nitrogen-containing products, consistent with participation of ambient air and moisture. QCM identifies a limited precursor-concentration window in which mass increases monotonically during plasma exposure and remains constant after shutdown; outside this window, post-discharge mass loss occurs, indicating desorption of weakly bound species. XPS confirms carbon-rich films incorporating oxygen- and nitrogen-containing functionalities and complete substrate coverage at higher precursor concentrations.