Post-Moore two-dimensional integrated electronics for angstrom-nodes

Abstract As integrated circuits approach the angstrom-nanometer nodes in recent years, the continued downscaling of silicon‑based electronics faces fundamental physical limits and escalating manufacturing costs. Two-dimensional (2D) materials—characterized by their atomically thickness, exceptional electrostatic gate control, and inherent suitability for heterogeneous integration—have arisen as promising alternatives to extend device scaling beyond the limits of silicon technology. This review provides a systematic overview of advances in integrated electronics based on 2D materials. The discussion begins with recent developments in wafer-scale synthesis and transfer techniques for 2D semiconductors. Subsequently with progress in high-performance 2D transistors, focusing on gate dielectric integration, contact optimization, and scaling strategies for high-density and advanced-node configurations. Circuit- and system-level implementations are also surveyed, including logic, memory, and three-dimensional (3D) monolithic integration. Further, key challenges and prospective directions are highlighted for realizing scalable, manufacturable, and low-power 2D electronic systems at the angstrom-nodes.