Wide Bandgap Semiconductors for Power Electronics: Comparative Properties, Applications, and Reliability of GaN and SiC Devices

Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have revolutionized modern power electronics by enabling devices that operate at higher voltages, temperatures, and switching frequencies than their silicon counterparts. This paper reviews the material properties, device architectures, fabrication techniques, and thermal management strategies that underpin the performance of GaN and SiC technologies. We highlight key trade-offs between GaN and SiC in terms of voltage blocking capability, switching efficiency, and thermal robustness and discussed their application in electric vehicles, renewable energy systems, and power converters. Market adoption trends and manufacturing challenges are also analyzed, with attention to cost-performance dynamics and packaging innovations. Finally, we address the critical role of thermal boundary resistance and emerging reliability solutions, providing a perspective on the future trajectory of WBG device research and commercialization.