Ultra-Fast Digital Silicon Photomultiplier with Timestamping Capability in a 110 nm CMOS Process

A monolithic digital Silicon Photomultiplier (SiPM) featuring 1024 microcells with a 30-micrometer pitch and a 50% fill factor has been designed in a 110-nanometer CMOS image sensor technology. The device under consideration integrates both SPAD sensors and front-end electronics in the same substrate. It can count up to 1024 photons in less than 22 ns, while assigning timestamps to the first and last detected photons with a time resolution of less than 100 ps. A parallel counter structure combined with a fast adder tree provides photon counting in digital form with low latency, whereas a carefully balanced fast NAND tree ensures a fixed-pattern time uncertainty not exceeding 26 ps. The architecture incorporates in-pixel memory for individual cell disabling and configurable thresholding on the timing signal for noise mitigation. In order to optimize the fill factor, a part of the electronics is placed outside the array, while the most sensitive elements of the timing and counting circuits are laid out close to the sensor, in the SPAD array. A serial readout is employed to provide a single output connection per SiPM, thereby simplifying system integration.