Gallium–Sulfur-Compounds as Potential Single-Source MOCVD Precursors

New molecular Ga–S-compounds were synthesized following a straightforward and high-yielding alkane elimination pathway. The compounds were characterized using NMR and IR spectroscopy, mass spectrometry, and elemental analysis. To validate an application’s potential as a single-source precursor (SSP) for the metal organic chemical vapor deposition (MOCVD) of GaS, their thermal properties were investigated using TGA/DSC experiments. Further, we determined the single-crystal molecular structure of selected examples by XRD. Deposition and decomposition of one selected SSP on c-plane sapphire was investigated using TPD, XPS, and AES, which confirm the formation of GaS-containing layers.