On the investigation of the boron-implantation-induced transition from β-Ga ₂ O ₃ to γ-Ga ₂ O ₃

In this work, the study of the β→γ phase transition in a boron-implanted β-Ga 2 O 3 single crystal by high-resolution X-ray diffractometry and transmission electron microscopy is described. Some methodological aspects of experiments with these methods are analysed, with particular attention to crystallographic considerations. A mechanism of the phase transition is proposed, on the basis of the principles of closest packing and the statistical redistribution of Ga cations within the voids of the anion sublattice characterizing the disordered γ phase.