A Broad-Band Self-Powered Photodetector Based on a MoTe2/Bi2Te3 Heterojunction for Optical Imaging and Bias-Controlled Signal Modulation

Self-powered photodetectors are highly demanded in applications but often suffer from limited spectral absorption, slow response speed, and high dark currents. Two-dimensional van der Waals heterostructures have emerged as promising candidates owing to their designable structures and excellent performance. Herein, we construct a MoTe₂/Bi₂Te₃ heterostructure and investigate its photoelectric properties. At zero bias, it exhibits a broad photovoltaic response ranging from 405 to 1550 nm. Benefiting from the interfacial built-in electric field, it achieves a responsivity of 1.38 A/W and a detectivity of 1.90 × 10¹² Jones at 532 nm and retains 174.56 mA/W and 2.4 × 10¹¹ Jones at 1060 nm, together with a low dark current of 1.6 × 10^-12 A. Upon a reverse bias of -1 V and 532 nm laser illumination at an intensity of 19.0 W/m², the responsivity is further boosted to 36.22 A/W, accompanied by rise and decay times of 32 ms and 33 ms, respectively. Taking advantage of the distinct optical switching ratios at zero/non-zero biases, application in optical imaging and bias-controlled signal modulation is realized, highlighting the heterojunction's potential as a broadband self-powered photodetector.