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Abstract We report that ultrathin sp²-hybridized amorphous carbon (aC) can act as a non-epitaxial template promoting nucleation of two-dimensional MoS₂. The aC surface, structurally disordered yet electronically uniform, reduces interfacial energy and limits adatom diffusion, preventing dewetting and enabling uniform film growth at low, back-end-of-line (BEOL) compatible temperatures (~250–400 °C), where nucleation on bare SiO₂ is suppressed. Low temperature deposition yields continuous, sulfur-rich amorphous MoS₂₊ₓ films with short-range Mo–S order and no long-range crystallinity, as confirmed by Raman scattering, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. Subsequent high-temperature annealing drives transformation into polycrystalline 2D MoS₂ with well-defined grain boundaries, while preserving the aC template. This observation demonstrates that aC decouples nucleation from crystallization, stabilizing metastable amorphous phases and directing phase evolution. The amorphous templating strategy extends beyond conventional epitaxy, offering a scalable platform for phase-engineered 2D materials, with potential applications in electronics, memory devices, and energy technologies.