Effects of Device and Contact Dimension Scaling on the Performance of InGaN/GaN Quantum Dot Light-Emitting Diodes

Inspired by the growing demand for small and effective optoelectronic devices, this paper presents a simulation-based analysis of InGaN/GaN quantum dot light-emitting diode, focusing on the effects of systematic variation in both anode and cathode contact regions, as well as overall device size. Two-dimensional simulations using APSYS software were used to examine the impact of scaling the device dimensions as well as the individual contact dimensions on significant performance parameters like internal quantum efficiency (IQE), optical output power, and current-voltage (IV) response. We simulated five LED device sizes that is 50 × 50 µm2, 100 × 100 µm2, 200 × 200 µm2, 300 × 300 µm2, and 400 × 400 µm2. As device size grows, so does the total current at each voltage. The highest current measurement is achieved by the device with dimensions 400 × 400 µm2 while the lowest is observed on the device with dimensions 50 × 50 µm2. In addition to changing the device dimensions, we ran extensive simulations on the sizes of p-type and n-type contacts. Notable changes were seen in the efficiency, optical power, and emission profile of the p-contact. The behavior of p-side contacts from 0 to 50 µm was the same, while contacts between 60 and 100 µm showed significant differences. The significant performance parameters were unaffected by changes to n-contact dimensions. The results of this study illustrate how the configuration of contacts and dimensions greatly influences the electrical and optical performance of quantum dot light-emitting diode. The results are believed to be helpful to researchers working on the design of next-generation compact and efficient solid-state lighting devices.