Technology Computer‐Aided Design (TCAD) for Simulation of Advanced Transistor Design

Due to increasing complexity of current transistor size and the architecture, semiconductor device simulation has emerged as a prominent method for estimating the device performance. It is undoubtedly an excellent approach to insight the electrical behavior enhancing device reliability omitting the environmental factors, fabrication cycle time in a cost-effective manner. Technology Computer-Aided Design (TCAD) tool simulates a vital function in semiconductor device simulation, supporting precise models for process, device, and mixed-mode simulations. This chapter analyzes potential of Sentaurus TCAD in modeling and simulation of conventional to MOSHEMT (Metal oxide Semiconductor High Electron Mobility Transistors), including experimentation in driving low power energy-efficient, and sustainable transistor design and optimization. The chapter provides comprehensive details on tool usage through practical device simulation examples contributing to innovation in semiconductor technology advancement.