Recessed-source/drain SOI feedback FET-based neuron with inhibitory and excitatory inputs for neuromorphic computing

In this study, we explored the neuron operations using a recessed source/drain feedback field effect transistor (Re-S/D FBFET). FBFETs are very high on (ION) current with almost zero SS. In this study, we showed how to use the neuron for neuromorphic applications particularly using inhibitory and excitatory inputs. The key to our demonstration lies in the careful design of two critical device level features: 1. the abrupt hysteretic transitions of the ReS/D SOI FBFET, which exhibit no stable states; and 2. the dynamic tunability of the hysteresis in the Re-S/D SOI FBFET, influenced by bias conditions, enabling the inhibition functionality. The proposed N-type Re-S/D SOI FBFET-based neuron circuit with different excitatory and inhibitory inputs can imitate various spiking patterns and shows promise and potential for future neuromorphic circuits.