Compact modeling of MOSFET using Verilog-A for circuit-level VLSI simulation

Present BSIM-based MOSFET models are too complicated to be simulated quickly and too large to be used for educational purposes. A compact, tunable, and accurate model is needed. The popular BSIM models for MOSFETs are highly accurate but also slow and complicated, making them impractical for teaching or initial design purposes. Therefore, a simplified model is created that retains only the essential equations but still includes major effects such as threshold voltage variations, short-channel effects, and mobility degradation. The necessary device parameters are computed with MATLAB and subsequently applied in Verilog-A to construct an easy-to-use and clear model. This model is validated in LTSpice, and the outcomes (I–V and transfer curves) coincide well with typical SPICE data. Generally, it offers quicker and easier simulations with little loss in precision, which makes it convenient for education, learning, and rapid VLSI design prototyping.