Molecular Insights into Laser -rotation -assisted grinding of GaAs: Thermal, Mechanical, and Structural Responses

Abstract Gallium arsenide (GaAs), as a critical semiconductor material, plays an important role in the electronics and aerospace industries. However, existing machining techniques still face limitations in improving the mechanical performance and machining quality of GaAs. To address these challenges, this study proposes a laser-rotation-assisted grinding method that combines laser heating with abrasive rotation. Using molecular dynamics (MD) simulations, the effects of laser assistance and rotational assistance on material removal behavior, stress distribution, dislocation evolution, and atomic-scale structural transformations are systematically investigated. Compared with conventional grinding, laser-rotation-assisted grinding significantly reduces grinding forces, decreases the extent of high-stress regions, suppresses dislocation formation, and improves surface quality and structural stability. These findings provide deeper insight into the material removal mechanisms under coupled machining fields and offer important theoretical guidance for the development of high-precision semiconductor machining technologies.