High‐Power Performance of Textured Piezoelectric Ceramics Through Synergistic A‐Site Donor and B‐Site Acceptor Doping

Temperature stability is a critical factor in high-power applications due to the substantial heat generated during high-frequency resonant operation. While properties such as the electromechanical quality factor (Q_m) and Curie temperature (T_C) are essential for ensuring thermal robustness, enhancing the piezoelectric constant (d₃₃) is equally important for improving overall performance. However, these properties often exhibit trade-offs, making simultaneous enhancement a significant challenge. In this study, a complementary doping strategy was adopted by introducing Eu ion as an A-site donor and Mn ion as a B-site acceptor into the PIN-PMN-PT system. This approach effectively mitigated cation-oxygen vacancy recombination through spatial separation. Furthermore, the templated grain growth (TGG) method was employed to align domains, thereby further enhancing the piezoelectric properties. As a result, 0.24PIN-0.46PMN-0.30PT textured ceramics co-doped with 2 mol% Mn and 1.5 mol% Eu ions exhibited outstanding performance metrics: d₃₃ of 508 pC/N, a planar coupling coefficient (k_p) of 64%, and Q_m exceeding 850, while maintaining T_C above 170°C. The resulting transducer Figure-of-merit (d₃₃ × Q_m) surpasses 400 000, establishing a new benchmark for high-power piezoelectric materials and demonstrating strong potential for next-generation transducer technologies.