Impact of Power, EMI, and SET on VLSI NOR Circuits with Collaborative Hardening Approaches

Under deep submicron and nanoscale VLSI process conditions, chip reliability design has become equally critical as performance and power consumption. As a fundamental building block of SRAM, latches, and various combinational logic circuits, the stability of NOR gates directly determines the reliable operation of chips. This paper focuses on investigating the impacts of power consumption (static and dynamic), electromagnetic interference (EMI), and single-event transients (SET) on the performance of NOR circuits, analyzing both their individual effects and the coupling mechanisms under concurrent interactions. Findings reveal that excessive power consumption induces heating and compresses noise margins; EMI compromises signal integrity through coupling; and SET can trigger transient errors or even soft errors. By systematically examining the mechanisms of these phenomena in light of advanced process node characteristics, corresponding countermeasures are proposed, including circuit-level optimization, layout design methods, and system-level protection strategies. Through a comprehensive study of their synergistic effects, a cross-level, multi-dimensional collaborative design paradigm is further proposed to enhance the reliability of NOR circuits in complex environments, providing implementable theoretical support and engineering pathways for highly reliable chip design.