Influence of deposition temperature and thickness of ALD-TiO2 on planar perovskite solar cell performance

• TiO 2 layers with varying thickness were deposited by atomic layer deposition (ALD) • Three different deposition temperatures were used: 150 °C, 250 °C, 350 °C. • The crystallinity and surface properties of the TiO 2 layers were investigated. • ALD-TiO 2 was used as electron transport layers (ETLs) in perovskite solar cells. • Best performing solar cells among the ALD processed ETLs were deposited at 250 °C. In perovskite solar cells (PSCs), electron transport layers (ETLs) play an important role in the selection and transport of electrons. Understanding the properties of these layers in relation to device performance is essential for optimizing solar cell efficiency and enabling their integration into emerging architectures, such as flexible solar cells. Here, we deposited TiO 2 at different thicknesses using atomic layer deposition (ALD), a technique well-suited for producing uniform and pinhole-free films. The crystal structure of the layers was controlled by depositing the films at three different temperatures: 150 °C, 250 °C, and 350 °C. The layers were characterized in detail to determine the morphology (by atomic force microscopy), surface composition (by X-ray photoelectron spectroscopy) and the crystal structure (by X-ray diffraction). The TiO 2 layers were then incorporated as ETLs in planar perovskite solar cells to evaluate their influence on device performance. Higher deposition temperatures led to improvements in device fill factor and open-circuit voltage, leading to more efficient solar cells. Notably, the best device performance for the ALD-TiO 2 layers was achieved with films deposited at 250 °C.