Bond-length strain in buried Ga1−xInxAs thin-alloy films grown coherently on InP(001)

199824 citationsJournal Article

Authors

J. C. Woicik · National Institute of Standards and Technology

Abstract

The bond lengths in a series of strained, buried Ga1−xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.

Topics & Keywords

Semiconductor Quantum Structures and Devices GaN-based semiconductor devices and materials Electron and X-Ray Spectroscopy Techniques

UN Sustainable Development Goals

Life in Land

Publication Details

Published in: Applied Physics Letters

Volume 73, Issue 9, pp. 1269-1271

DOI: 10.1063/1.122371

Field-Weighted Citation Impact: 2.04