Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

200234 citationsJournal Article

Authors

Isaho Kamata · Central Research Institute of Electric Power Industry

Hidekazu Tsuchida · Central Research Institute of Electric Power Industry

Tamotsu Jikimoto · Central Research Institute of Electric Power Industry

Kunikazu Izumi · Central Research Institute of Electric Power Industry

Abstract

In this study, we investigated the influence of 4H–SiC growth conditions on micropipe dissociation. The C/Si ratio of the reactant gases for chemical vapor deposition (CVD) epitaxial growth has a major influence on the probability of micropipe dissociation. A high probability of micropipe dissociation of over 98% was successfully obtained at a low C/Si ratio. We also investigated the surface morphology of 4H–SiC epilayers around dissociated and continuous micropipes grown under different C/Si growth conditions.

Topics & Keywords

Silicon Carbide Semiconductor Technologies Copper Interconnects and Reliability Semiconductor materials and devices

Publication Details

Published in: Japanese Journal of Applied Physics

Volume 41, Issue Part 2, No. 10B, pp. L1137-L1139

DOI: 10.1143/jjap.41.l1137

Field-Weighted Citation Impact: 6.11

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Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

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Abstract

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Publication Details