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Tamotsu Jikimoto | Researchclopedia

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Tamotsu Jikimoto

Central Research Institute of Electric Power Industry

45

Works

394

Citations

9

h-index

9

i10-index

Research Topics

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Semiconductor materials and interfaces

Affiliations

Central Research Institute of Electric Power Industry1999–2009

Okayama University of Science1996–1999

Top Works

Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

Isaho Kamata,Hidekazu Tsuchida,et al.

200073 citations

Copper Interconnects and Reliability

Thin-Film Transistor Technologies

Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Hidekazu Tsuchida,I. Kamata,et al.

200271 citations

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Tomonori Nakamura,Toshiyuki Miyanagi,et al.

200546 citations

Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

Isaho Kamata,Hidekazu Tsuchida,et al.

200234 citations

Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation

Isaho Kamata,Hidekazu Tsuchida,et al.

200120 citations

LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

Hidekazu Tsuchida,Isaho Kamata,et al.

200017 citations

Silicon Carbide and Related Materials 2001

Sadafumi Yoshida,Shigehiro Nishino,et al.

200215 citations

Interface States in Abrupt SiO<sub>2</sub>/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

Toshiharu Ohnuma,Hidekazu Tsuchida,et al.

200412 citations

Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

Hidekazu Tsuchida,Isaho Kamata,et al.

200210 citations