Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by <i>In Situ</i> Electroluminescence Imaging

We evaluate the velocity of stacking faults (SFs) expansion under various current and temperature levels on the pn diodes by electroluminescence (EL) observation in situ . The driving force of the SFs expansion is analyzed on the basis of the experimental results. The velocity of the SFs expansion increases in proportional to the current density at the every junction temperature levels. The activation energy for the velocity of the SFs expansion is estimated.