Photo-Induced Chemical Vapor Deposition of SiO₂ Film Using Direct Excitation Process by Deuterium Lamp

An attempt has been made on a low-temperature photo-induced chemical vapor deposition of SiO 2 thin films by direct excitation without Hg sensitization under irradiation of a deuterium lamp having high energy photons. The film growth has been confirmed at 84°C and the substrate temperature for a considerably good film quality was above 170°C. The deposition rates and the refractive indices of the films deposited above about 170°C are about 100 Å/min. and 1.44–1.46, respectively. Infrared absorption peaks related with Si–H bonding don't appear in the photo-CVD film deposited above 175°C, but appear in the thermal CVD film deposited at 175°C.