Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor Deposition

1988134 citationsJournal Article

Authors

D. E. Aspnes

E. Colas

Abstract

Time, pressure, and temperature dependences of the optically determined surface coverage by Ga-containing species reveal that the kinetic limits to crystal growth in atmospheric-pressure organometallic chemical-vapor deposition on (001) GaAs are determined by reversible excluded-volume chemisorption and subsequent decomposition of trimethylgallium at surface lattice sites.

Topics & Keywords

Semiconductor Quantum Structures and Devices nanoparticles nucleation surface interactions GaN-based semiconductor devices and materials

Publication Details

Published in: Physical Review Letters

Volume 61, Issue 24, pp. 2782-2785

DOI: 10.1103/physrevlett.61.2782

Field-Weighted Citation Impact: 9.83

Command Palette

Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor Deposition

Authors

Abstract

Topics & Keywords

Publication Details