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A. A. Studna | Researchclopedia

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A. A. Studna

51

Works

8,373

Citations

25

h-index

37

i10-index

Research Topics

Semiconductor Quantum Structures and Devices Semiconductor materials and devices GaN-based semiconductor devices and materials

Affiliations

AT&T (United States)1984–1987

University of Illinois Urbana-Champaign1990–1990

Bell (Canada)1989–1989

NTT (Japan)1971–1971

TD Bank1987–1988

Top Works

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes,A. A. Studna

19833,947 citations

Molecular Junctions and Nanostructures

Semiconductor materials and interfaces

High Precision Scanning Ellipsometer

D. E. Aspnes,A. A. Studna

1975644 citations

Schottky-Barrier Electroreflectance: Application to GaAs

D. E. Aspnes,A. A. Studna

1973589 citations

Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs

D. E. Aspnes,J. P. Harbison,et al.

1988509 citations

Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

D. E. Aspnes,A. A. Studna

1985424 citations

Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV

D. E. Aspnes,A. A. Studna,et al.

1984327 citations

Chemical etching and cleaning procedures for Si, Ge, and some III-V compound semiconductors

D. E. Aspnes,A. A. Studna

1981227 citations

Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)

D. E. Aspnes,J. P. Harbison,et al.

1987212 citations

Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor Deposition

D. E. Aspnes,E. Colas,et al.

1988134 citations