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G. D. Wilk | Researchclopedia

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G. D. Wilk

ASM International

100

Works

12,913

Citations

36

h-index

56

i10-index

Research Topics

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Electronic and Structural Properties of Oxides

Affiliations

University of North Texas2002–2002

University of Minnesota1997–1999

RTX (United States)1997–1997

Siemens (Germany)2005–2005

Harvard University1994–1997

Top Works

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk,Robert M. Wallace,et al.

20015,828 citations

Semiconductor materials and interfaces

Integrated Circuits and Semiconductor Failure Analysis

Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk,Robert M. Wallace,et al.

2000971 citations

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

G. D. Wilk,Robert M. Wallace

1999503 citations

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

P. D. Ye,Bingzheng Yang,et al.

2005496 citations

Stable zirconium silicate gate dielectrics deposited directly on silicon

G. D. Wilk,Robert M. Wallace

2000326 citations

Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

Martin M. Frank,G. D. Wilk,et al.

2005312 citations

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

P. D. Ye,G. D. Wilk,et al.

2003306 citations

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green,M.-Y. Ho,et al.

2002279 citations

Direct extraction of the electron tunneling effective mass in ultrathin SiO2

B. Brar,G. D. Wilk,et al.

1996273 citations