Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

2011281 citationsJournal Article

Authors

Kazuhito Ban · Meijo University

Junichi Yamamoto · Meijo University

Kenichiro Takeda · Meijo University

Kimiyasu Ide · Meijo University

Motoaki Iwaya · Meijo University

Tetsuya Takeuchi · Meijo University

Satoshi Kamiyama · Meijo University

Abstract

We analyze the internal quantum efficiency (IQE) of whole-composition-range AlGaN multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation-density-dependent photoluminescence measurement. IQEs of deep ultraviolet/ultraviolet (DUV/UV) MQWs are strongly dependent on the DD. IQE with an excess carrier density of 1×1018 cm-3 changes from 4 to 64% when the DD changes from 6×109 to 2×108 cm-2. This trend is almost the same for DUV/UV MQWs with emission wavelength ranging from 230 to 350 nm. Thus, the reduction of the DD is very important for the realization of a high-IQE DUV/UV active layer.

Topics & Keywords

GaN-based semiconductor devices and materials Ga2O3 and related materials Semiconductor materials and devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Physics Express

Volume 4, Issue 5, pp. 052101-052101

DOI: 10.1143/apex.4.052101

Field-Weighted Citation Impact: 8.65