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Isamu Akasaki | Researchclopedia

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Isamu Akasaki

Nagoya University

1,101

Works

28,044

Citations

76

h-index

418

i10-index

Research Topics

GaN-based semiconductor devices and materials Ga2O3 and related materials Semiconductor Quantum Structures and Devices

Affiliations

Linköping University1998–2010

Panasonic (Japan)1965–1978

Hewlett-Packard (United States)2000–2000

Lawrence Berkeley National Laboratory1996–2000

Philipps University of Marburg1997–1999

Top Works

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano,Nobuhiko Sawaki,et al.

19862,167 citations

ZnO doping and properties

Semiconductor materials and devices

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano,M. Kito,et al.

19891,936 citations

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki,Hiroshi Amano,et al.

1989687 citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu,Akira Uedono,et al.

2006683 citations

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Tetsuya Takeuchi,Christian Wetzel,et al.

1998614 citations

Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Tetsuya Takeuchi,Hiroshi Amano,et al.

2000511 citations

Shortest wavelength semiconductor laser diode

Isamu Akasaki,S. Sota,et al.

1996462 citations

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu,Shintaro Itoh,et al.

1991296 citations

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Kazuhito Ban,Junichi Yamamoto,et al.

2011281 citations