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Hiroshi Amano | Researchclopedia

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Hiroshi Amano

Kyoto University ORCID

1,763

Works

41,482

Citations

88

h-index

620

i10-index

Research Topics

GaN-based semiconductor devices and materials Ga2O3 and related materials Semiconductor materials and devices

Affiliations

Linköping University1997–2013

Japan Atomic Energy Agency1969–1990

National Institute of Technology, Toyota College2013–2013

Hewlett-Packard (United States)2000–2000

Doshisha University2009–2012

Top Works

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano,Nobuhiko Sawaki,et al.

19862,167 citations

ZnO doping and properties

Semiconductor Quantum Structures and Devices

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano,M. Kito,et al.

19891,936 citations

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Michael Kneissl,Tae‐Yeon Seong,et al.

20191,242 citations

The 2018 GaN power electronics roadmap

Hiroshi Amano,Yannick Baines,et al.

20181,229 citations

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Tetsuya Takeuchi,Shigetoshi Sota,et al.

19971,216 citations

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki,Hiroshi Amano,et al.

1989687 citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu,Akira Uedono,et al.

2006683 citations

Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Isamu Akasaki Isamu Akasaki,Hiroshi Amano

1997657 citations

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Tetsuya Takeuchi,Christian Wetzel,et al.

1998614 citations