Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

In hydride vapor phase epitaxial (HVPE) growth of GaN, the sputtered ZnO layer has been found to be one of the best buffer layers because of the fact that physical properties of ZnO are nearly analogous with those of GaN. With a ZnO buffer layer, the reproducibility of growing GaN single crystal by HVPE has been greatly improved. The GaN films grown by this method show excellent crystalline, electrical, and optical properties. In particular, the Hall mobility of 1920 cm2 V−1 s−1 at 120 K is the highest value that has ever been reported by HVPE.