Pit formation in GaInN quantum wells

1998252 citationsJournal Article

Authors

Y. Chen · Hewlett-Packard (United States)

Tetsuya Takeuchi · Meijo University

Hiroshi Amano · Meijo University

Isamu Akasaki · Meijo University

N. Yamada · Hewlett-Packard (Japan)

Y. Kaneko · Hewlett-Packard (Japan)

Shih-Yuan Wang ·

Abstract

The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on 〈11̄01〉 planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs.

Topics & Keywords

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Acoustic Wave Resonator Technologies

Publication Details

Published in: Applied Physics Letters

Volume 72, Issue 6, pp. 710-712

DOI: 10.1063/1.120853

Field-Weighted Citation Impact: 7.18

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Pit formation in GaInN quantum wells

Authors

Abstract

Topics & Keywords

Publication Details