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Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

1991296 citationsJournal Article

Authors

K. Hiramatsu · Nagoya University

Shintaro Itoh · Nagoya University

Hiroshi Amano · Nagoya University

Isamu Akasaki · Nagoya University

N. Kuwano · Kyushu University

T. Shiraishi · Kyushu University

K. Oki · Kyushu University

Topics & Keywords

GaN-based semiconductor devices and materials ZnO doping and properties Ga2O3 and related materials

UN Sustainable Development Goals

Life below water

Publication Details

Published in: Journal of Crystal Growth

Volume 115, Issue 1-4, pp. 628-633

DOI: 10.1016/0022-0248(91)90816-n

Field-Weighted Citation Impact: 1.10

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE | Researchclopedia