Wafer-scale characterization for two-dimensional material layers

Abstract Logic devices based on two-dimensional (2D) channel materials require highly crystalline monolayers. Despite various laboratory-scale metrology techniques being intensively used to characterize 2D materials on small coupons, the development of in-line and routine characterization of 2D material monolayers grown on 300 mm wafers remains in its early stages. In this work, we evaluate and combine different in-line metrologies to characterize the thickness and morphology of tungsten disulfide (WS 2 ) monolayers at the 300 mm wafer level. By combining complementary metrology techniques, we reveal the morphology of WS 2 , the WS 2 layer thickness and within-wafer uniformity for different WS 2 deposition conditions across 300 mm wafers.