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Nobuhiko Sawaki | Researchclopedia

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Nobuhiko Sawaki

Aichi Institute of Technology ORCID

332

Works

8,819

Citations

40

h-index

111

i10-index

Research Topics

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Ga2O3 and related materials

Affiliations

CSL (United Kingdom)2013–2013

Gyeongguk National University2015–2015

National Institute of Technology, Toyota College1994–1994

National Yang Ming Chiao Tung University2011–2011

Universität Innsbruck1989–1990

Top Works

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano,Nobuhiko Sawaki,et al.

19862,167 citations

ZnO doping and properties

Semiconductor materials and devices

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki,Hiroshi Amano,et al.

1989687 citations

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato,Shota Kitamura,et al.

1994316 citations

Schottky barrier on <i>n</i>-type GaN grown by hydride vapor phase epitaxy

Peter Hacke,Theeradetch Detchprohm,et al.

1993288 citations

Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

Peter Hacke,Theeradetch Detchprohm,et al.

1994287 citations

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

Hiroshi Amano,Isamu Akasaki,et al.

1988268 citations

Energy band-gap bowing parameter in an Al<i>x</i>Ga1−<i>x</i> N alloy

Yasuo Koide,H. Itoh,et al.

1987203 citations

Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

Tetsuya Takeuchi,Hiroshi Amano,et al.

1991188 citations

The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization

K. Hiramatsu,Y. Kawaguchi,et al.

1997160 citations