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N. Natsuaki | Researchclopedia

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N. Natsuaki

Applied Materials (Germany)

76

Works

854

Citations

16

h-index

24

i10-index

Research Topics

Silicon and Solar Cell Technologies Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and devices

Affiliations

Applied Materials (United States)2005–2005

Applied Materials (Germany)2006–2006

Hitachi (Japan)1976–2003

Top Works

MeV-energy B+, P+ and As+ ion implantation into Si

M. Tamura,N. Natsuaki,et al.

198793 citations

Semiconductor materials and interfaces

Ion-surface interactions and analysis

Advantages of Fluorine Introduction in Boron Implanted Shallow p<sup>+</sup>/n-Junction Formation

K. Ohyu,Toshihiko Itoga,et al.

199066 citations

Observation of <i>p</i> <i>n</i> junctions on implanted silicon using a scanning tunneling microscope

Sumio Hosaka,Shigeyuki Hosoki,et al.

198860 citations

Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing

Masanobu Miyao,Teruaki Motooka,et al.

198159 citations

Low-energy mass-separated ion beam deposition of materials

Takeshi Tokuyama,Kunihiro Yagi,et al.

198155 citations

Nonequilibrium solid solutions obtained by heavy ion implantation and laser annealing

N. Natsuaki,M. Tamura,et al.

198046 citations

Depth distribution of secondary defects in 2-MeV boron-implanted silicon

M. Tamura,N. Natsuaki,et al.

198644 citations

A model for the segregation and pileup of boron at the SiO2/Si interface during the formation of ultrashallow p+ junctions

Akio Shima,Tomoko Jinbo,et al.

200139 citations

Improvement of SiO<sub>2</sub>/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion

K. Ohyu,Toshihiko Itoga,et al.

198936 citations